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長庚大學 光電工程研究所

1.        Journal of the Electrochemical Society 157 (2) H160-H164 (2010), Hsien-Chin Chiu, Chao-Wei Lin, Chao-Hung Chen, Chin-Wei Yang, Che-Kai Lin, Jeffrey S. Fu, Liann-Be Chang, Ray-Ming Lin and Kuang-Po Hsueh, “Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs”


2.    IEEE Transactions on Electron Devices 57 (1) (2010) 119-124, Liann-Be Chang, Kuo-Ling Chiang, Hsin-Yi Chang, Ming-Jer Jeng, Chia-Yi Yen, Cheng-Chen Lin, Yuan-Hsiao Chang, Mu-Jen Lai, Yu-Lin Lee and Tai-Wei Soong, “Electrostatic reliability characteristics of GaN Flip-Chip power light emitting diodes with metal Oxide silicon submount”

3.    Japanese Journal of Applied Physics 48 05DF02 (2009), Atanu Das, Siddheswar Maikap, Wei-Chih Li, Liann-Be Chang, and Jer-Ren Yang, “Physical and Memory Characteristics of Atomic-Layer-Deposited High-k Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-OxideMetalGate”

4.    Microelectronic Engineering (2009), Atanu Das, S. Maikap, C.-H. Lin, P.-J. Tzeng, T.-C. Tien, T.-Y. Wang, L.-B. Chang, J.-R. Yang, M.-J. Tsai, “Ruthenium Oxide Metal Nanocrystal Capacitors with High-k Dielectric Tunneling Barriers for Nanoscale Nonvolatile Memory Device Applications”In Press.

5.    Microwave and Optical Technology Letters Vol.51,No 12 (2009),Ji-Chyun Liu, Jhih-Wei Wang, Atanu Das and Liann-Be Chang, “Wide-Band Double-Ring Resonator with Transmission Zeros and Resonances Using High Permittivity Aluminum Nitride Substrate”


6.    Journal of Physics D: Applied Physics 42 (10), art. no.105101 (6pp), 2009.4.24, Ming-Jer Jeng, Yu-Lin Lee and Liann-Be Chang, “Temperature dependence of InxGa1-xN multiple quantum well solar cells”


7.    Applied Surface Science, Volume 225 Pages 6155-6158, 2009.3.1, Liann-Be Chang,Ching-Chuan Shiue,Ming-Jer Jeng,”High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contancts for flip-chip Light-emitting diode(FCLED) application”SCI/EI


8.    Journal of the Electrochemical Society, 156 (3), pp. K28-K32, 2009. S. Maikap, Atanu Das, T. Y. Wang, T. C. Tien, and L. B. Chang, “High-k HfO2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited HfO2/Al2O3 nano-mixtures” SCI


9.    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 11,2008, Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, “Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-kPraseodymium OxideLayer“SCI/EI


10.  Semiconductor Science and Technology, Volume 23, Issue 3(2008), Chiu, H.-C., Huang, Y.-C., Chang, L.-B., Chien, F.-T, “GaAs pseudomorphic HEMT with insulating gate films formed by P 2S5/(NH4)2SX sulfurization of recessed GaAs surface“SCI/EI


11.  SPIE the international and society for optical engineering, Volume 6894, 2008, P.P 689412 (2008), Chang, L.-B., Chang, Y.-H., Chang, Y.-S., Jeng, M.-J, “On chip surge protection for GaN-power LEDs by ZnO thin film varistor“SCI/EI


12.  Applied Surface Science, Volume 254, Issue 15, Pages 4479-4482 (2008), Jeng, Ming Jer, Shiue, Ching Chuan, Chang, Liann Be, “The reflectivity of Mo/Ag/Au ohmic contacts on p-type GaN for flip-chip light-emitting diode (FCLED) applications”SCI/EI


13.  Journal of the Electrochemical Society 155 (12), pp. H955-H958(2008), Chiu, Hsien Chin, Lin, Chao W, Lin, Che K, Chang Liann Be,

 “Comprehensive study of GaAs MOSFETs using gadolinium oxide and praseodymium oxide layers“SCI/EI

14.  IEEE Trans. Electron Device, vol.55, pp. 721-726 (2008), Hsien-Chin Chiu, Yuan-Chang Huang, Chung-Wen Chen and Liann-Be Chang, “Electrical Characteristics of Passivated Pseudomorphic HEMTs with P2S5/(NH4)2SX Pretreatment”



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