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長庚大學 光電工程研究所
光電元件實驗室>論文著述

(A) 期刊論文

  1. N.C. Chen*, Y.N. Wang, Y.S. Wang, W.C. Lien, and Y.C. Chen, “Damage of light-emitting diodes induced by high reverse-bias stress”, J. Crystal Growth 311, 994, 2009. (SCI)

  2. N.C. Chen*, C.Y. Tseng, and H.T. Lin, “Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure”, J. Crystal Growth 311, 859, 2009. (SCI)

  3. N.C. Chen*, C.M. Lin, C. shen, W.C. Lien, and T.Y. Lin, “Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electron-hole recombination lifetime”, Optics Express 16, 20759 (2008). (SCI)

  4. N.C. Chen*, C.M. Lin, Y.K. Yang, C. Shen, T.W. Wang, and M.C. Wu, “Measurement of Junction Temperature in a Nitride Light-Emitting Diode”, Jpn. J. Appl. Phys. 47, 8779 (2008). (SCI)

  5. T.W. Wang, N.C. Chen, W.C. Lien, M.C. Wu, and C.F. Shih, “Effects of the GaN and AlN nucleation layers on the crack-free AlGaN templates”, J. Appl. Phys. 104, 063104 (2008). (SCI)

  6. L.H. Lin, S.S. Han, K.M. Chen, Z.Y. Zhang, K.Y. Chen, J.Z. Huang, Z.H. Sun, C.T. Liang, N.C. Chen, P.H. Chang, and C.A. Chang, “Correlation field analysis of magnetoresistance of GaN/AlGaN heterostructure grown on Si substrate”, Jpn. J. Appl. Phys. 47, 4623 (2008). (SCI)

  7. G.M. Wu, K.Y. Chen, C.H. Fang, T.E. Nee, J.C. Wang, N.C. Chen, Y.J. Hu, J.C. Lee, and Y.F. Wu, “Effect of excitonic interactions on abnormal luminescence behaviour of InGaN/GaN light-emitting diodes with electron tunneling layer”, Jpn. J. Appl. Phys. 47, 679 (2008). (SCI)

  8. C.F. Shih, N.C. Chen, C.Y. Tseng, “Photoelectron spectroscopic investigation of of InN and InN/GaN heterostructures”, Thin Solid Films 516, 5016 (2008). (SCI)

  9. N.C. Chen*, W.C. Lien, Y.S. Wang, and H.H. Liu, “Capacitance-Voltage and Current-Voltage Measurements of Nitride Light-Emitting Diodes”, IEEE T ELECTRON DEV. 54, 3223 (2007). (SCI)

  10. L.H. Lin, K.M. Chen, S.S. Han, C.T. Liang, W.C. Hsueh, K.Y. Chen, Z.H. Sun, P.H. Chang, N.C. Chen, and C.A. Chang, “Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si”, Physica E, 40, 343, 2007. (SCI)

  11. K.Y. Chen, C.T. Liang, N.C. Chen, P.H. Chang, and C.A. Chang, “Weak localization and electron-electtron interaction effects in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates”, Chin. J. Phys. 45, 616 (2007). (SCI)

  12. G.M. Wu, C.W. Tsai, N.C. Chen, and P.H. Chang, “Investigation of GaN crystal quality on silicon substrates using GaN/AlN superlattice structures”, Cryst. Res. Technol. 42, 1276 (2007). (SCI)

  13. N.C. Chen*, Y.K. Yang, W.C. Lien, and C.Y. Tseng, “Forward current-voltage characteristics of an AlGaInP light-emitting diode”, J. Appl. Phys. 102, 043706 (2007). (SCI)

  14. K.Y. Chen, L.H. Lin, Z.H. Sun, W.J. Shiue, C.T. Liang, P.H. Chang, N.C. Chen, and C.A. Chang, “Current Scaling and Electron Heating in a GaN/AlGaN Two-Diemnsional Electron System”, J. Korean Phys. Soc. 50, 1666 (2007). (SCI)

  15. E.S. Kannan, G.H. Kim, J.Y. Lin, J.H. Chen, K.Y. Chen, Z.Y. Zhang, C.T. Liang, L.H. Lin, D.H. Youn, K.Y. Kang, and N.C. Chen, “Experimental Eivdence for weak Insulator-Quantum Hall Transitions in GaN/AlGaN Two-diemensional Electron Systems”, J. Korean Phys. Soc. 50, 1643 (2007). (SCI)

  16. C.A. Chang, T.Y. Tang, P.H. Chang, N.C. Chen, and C.T. Liang, “Magnesium Doping of In-rich InGaN”, Jpn. J. Appl. Phys. 46, 2840 (2007). (SCI)

  17. N.C. Chen*, Y.K. Yang, Y.N. Wang, and Y.C. Huang, “Heat flow in AlGaInP/GaAs light-emitting diodes”, Appl. Phys. Lett. 90, 181104 (2007). (SCI)

  18. J.Z. Huang, H.Y. Chen, K.M. Chen, S.S. Han, L.H. Lin, Z.S. Sun, C.T. Liang, P.H. Chang, N.C. Chen, and C.A. Chang, “Electron-Electron Interactions in a Two-Dimensional Electron System in an Al0.15Ga0.85N/GaN Heterostructure Grown on p-type Si”, J. Korean Phys. Soc. 50, 754 (2007). (SCI)

  19. C.T. Liang, L.H. Lin, J.Z. Huang, Z.Y. Zhang, Z.H. Sun, K.Y. Chen, N.C. Chen, P.H. Chang, and C.A. Chang, “Electron-electron interactions in Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on Si substrates”, Appl. Phys. Lett. 90, 022107 (2007). (SCI)

  20. G.M. Wu, C.W. Tsai, C.F. Shih, N.C. Chen, and W.H. Feng, “GaN/Si(111) epilayer based on low temperatureAl/N and AlGaN/GaN superlattice for light emitting diodes”, Solid State Phenomena 121-123, 587, 2007 (SCI)

  21. G.W. Shu, P.F. Wu, M.H. Lo, J.L. Shen, T.Y. Lin, H.J. Chang, Y.F. Chen, C.F. Shih, C.A. Chang, and N.C. Chen, “Concentration dependence of carrier localization in InN epilayers”, Appl. Phys. Lett. 89, 131913, 2006 (SCI)

  22. P.H. Chang, C.T. Liang, N.C. Chen, T.Y. Huang, and Y.F. Chen, “Spuerconductivity and mixed-state characteristic of InN films by metal-organic vapor phase epitaxy”, Diamond & Related Materials 15, 1179, (2006) (SCI)

  23. S.P. Fu, T.J. Lin, W.S. Su, C.Y. Shieh, Y.F. Chen, C.A. Chang, N.C. Chen, and P.H. Chang, “Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms”, J. Appl. Phys. 99, 126102 (2006) (SCI)

  24. K.T. Wu, P.H. Chang, S.T. Lien, N.C. Chen, C.A. Chang, C.F. Shih, W.C. Lien, Y.H. Wu, S.C. Chen, Y.H. Chang, and C.T. Liang, “Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates”, Physica E 32, 566 (2006) (SCI)

  25. C.T. Liang, K.Y. Chen, N.C. Chen, P.H. Chang, and C.A. Chang, “Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates”, Appl. Phys. Lett. 89, 132107, 2006 (SCI)

  26. N.C. Chen*, Y.N. Wang, C.Y. Tseng, and Y.K. Yang, “Determination of junction temperature in AlGaInP/GaAs light emitting diodes by self-excited photoluminescence signal”, Appl. Phys. Lett. 89, 101114, 2006. (SCI)

  27. N.C. Chen*, W.C. Lien, C.F. Shih, P.H. Chang, T.W. Wang, and M.C. Wu, “Nitride light-emitting diodes grown on Si (111) using a TiN template”, Appl. Phys. Lett. 88, 191110, 2006. (SCI)

  28. A.P. Chiu, N.C. Chen, P.H. Chang, C.F. Shih, “Crack-free AlGaN/GaN Bragg mirrors grown on Si (111) substrate by metalorganic vapor phase epitaxy”, Phys. Stat. Sol. (c), 3, 2014, 2006. (EI)

  29. C.A. Chang, S.T. Lien, C.H. Liu, C.F. Shih, N.C. Chen, P.H. Chang, H.C. Peng, T.Y. Tang, W.C. Lien, Y.H. Wu, K.T. Wu, J.W. Chen, C.T. Liang, Y.F. Chen, T.U. Lu, T.Y. Lin, “Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si”, Jpn. J. Appl. Phys. 45, 2516, 2006. (SCI)

  30. C.H. Hou, C.C. Chen, B.J. Pong, M.H. Li, G.C. Chi, N.C. Chen, C.F. Shih, P.H. Chang, “GaN-based stacked micro-optics system”, Appl. Optics 45, 2396, 2006. (SCI)

  31. H.Y. Lin, Y.F. Chen, T.Y. Lin, C.F. Shih, K.S. Liu, N.C. Chen, “Direct evidence of compositional pulling effect in AlxGa1-xN epilayer”, J. Crystal Growth 290, 225, 2006. (SCI)

  32. W.S. Su, C.W. Lu, Y.F. Chen, T.Y. Lin, E.H. Lin, C.A. Chang, N.C. Chen, P.H. Chang, C.F. Shih, and K.S. Liu, “Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms”, J. Appl. Phys. 99, 053518, 2006. (SCI)

  33. N.C. Chen*, P.H. Chang, Y.N. Wang, H.C. Peng, W.C. Lien, C.F. Shih, Chin-An Chang, and G.M. Wu, “Schottky behavior at InN-GaN interface”, Appl. Phys. Lett. 87, 212111-1, 2005. (SCI)

  34. P.H. Chang, N.C. Chen*, Y.N. Wang, C.F. Shih, M.H. Wu, T.H. Yang, Y.H. Tzou, and S.J. Wang, “Light-emitting diodes with nickel substrates fabricated by electroplating”, J. Vac. Sci. Technol. B 23, L22, 2005. (SCI)

  35. C.F. Shih, N.C. Chen*, P.H. Chang, and K.S. Liu, “Band offsets of the InN/GaN interface”, Jpn. J. Appl. Phys. 44, 7892, 2005. (SCI)

  36. C.F. Shih, N.C. Chen*, P.H. Chang, and K.S. Liu, “Effect of surface electronic states of p-type GaN on the blue light-emitting diodes”, J. Electrochem. Society 152, G816, 2005. (SCI)

  37. C.F. Shih, N.C. Chen*, P.H. Chang, and K.S. Liu, “Field Emission Properties of Self-Assembled InN Nano-structures: Effect of Ga Incorporation”, J. Crystal Growth 281, 328, 2005. (SCI)

  38. C.F. Shih, N.C. Chen*, S.Y. Lin, and K.S. Liu, “AlGaN films grown on (0001) sapphire by a two-step method”, Appl. Phys. Lett. 86, 211103-1, 2005. (SCI)

  39. S.C. Chen, S.K. Lin, K.T. Wu, C.P. Huang, P.H. Chang, N.C. Chen, C.A Chang, H.C. Peng, C.F. Shih, K.S. Liu, H.S. Wang, P.T. Yang, C.T. Liang, Y.H. Chang, and Y.F. Chen, “Transport measurements on MOVPE-grown InN films”, Microelectronics Journal 36, 428, 2005. (SCI)

  40. C.F. Shih, M.Y. Keh, Y.N. Wang, N.C. Chen*, C.A. Chang, P.H. Chang, and K.S. Liu, “High-quality and crack-free AlxGa1-xN (x~0.2) grown on sapphire by a two-step growth method”, J. Crystal Growth 277, 44, 2005. (SCI)

  41. S.K. Lin, K.T. Wu, C.P. Huang, C.T. Liang, Y.H. Chang, Y.F. Chen, P.H. Chang, N.C. Chen, C.A. Chang, H.C. Peng, C.F. Shih, and K.S. Liu, “Electron transport in In-rich InxGa1-xN films”, J. Appl. Phys. 97, 046101-1, 2005. (SCI)

  42. C.F. Shih, N.C. Chen, C.A. Chang, and K.S. Liu, “Blue, Green and White InGaN Light-Emitting Diodes Grown on Si”, Jpn. J. Appl. Phys. 44, L 140, 2005. (SCI)

  43. N.C. Chen*, C.Y. Tseng, A.P. Chiu, C.F. Shih, and P.H. Chang, “Application of modified transmission line model to measure p-type GaN contact”, Appl. Phys. Lett. 85, 6086, 2004. (SCI)

  44. C.A. Chang, C.F. Shih, N.C. Chen, T.Y. Lin, and K.S. Liu, “In-rich In1-xGaxN films by metalorganic vapor phase epitaxy”, Appl. Phys. Lett. 85, 6131, 2004. (SCI)

  45. N.C. Chen*, C.F. Shih, C.A. Chang, A.P. Chiu, S.D. Teng, and K.S. Liu, “High-quality GaN films grown on Si(111) by a reversed Stranski-Krastanov growth mode”, Phys. Stat. Sol. (b), 241, 2698, 2004. (SCI)

  46. C.A. Chang, C.F. Shih, N.C. Chen, P.H. Chang, and K.S. Liu, “High mobility InN films grown by metal-organic vapor phase epitaxy”, Phys. Stat. Sol. (c), 1, 2559, 2004. (EI)

  47. N.C. Chen*, P.H. Chang, A.P. Chiu, M.C. Wang, W.S. Feng, G.M. Wu, C.F. Shih, and K.S. Liu, “Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN”, Appl. Phys. Lett. 84, 2584, 2004. (SCI)

  48. H.M. Chung, Y.C. Pan, W.C. Chuang, N.C. Chen, C.C. Tsai, M.C. Lee, W.H. Chen, and W.K. Chen, “Long-term photocapacitance decay behavior in undoped GaN”, Jpn. J. Appl. Phys. 40, 5871, 2001. (SCI)

  49. J.F. Chen, N.C. Chen, J.S. Wang, and Y.F. Chen, “ Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes”, IEEE T ELECTRON DEV. 48, 204, 2001. (SCI)

  50. J.F. Chen, J.S. Wang, M.M. Huang, and N.C. Chen, “Annealing dynamics of nitrogen-implanted GaAs films investigated by current-voltage and deep-level transient spectroscopy”, Appl. Phys. Lett. 76, 2283, 2000. (SCI)

  51. J.F. Chen, N.C. Chen, J.S. Wang, and P.Y. Wang, “ Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes”, Jpn. J. Appl. Phys. 39, 1102, 2000. (SCI)

  52. J.F. Chen, P.Y. Wang, J.S. Wang, N.C. Chen, X.J. Guo and Y.F. Chen, “Strain relaxation in In0.2Ga0.8As/GaAs quantum well structures by x-ray diffraction and photoluminescence”, J. Appl. Phys. 87, 1251, 2000. (SCI)

  53. J.F. Chen, P.Y. Wang, J.S. Wang, C.Y. Tsai, and N.C. Chen, “Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes”, J. Appl. Phys. 87, 1369, 2000. (SCI)

  54. J.F. Chen, J.S. Wang, P.Y. Wang, N.C. Chen and N.C. Hsu, ” Admittance spectroscopy and thermal stimulate current for band-offset characterization in AlAs/GaAs n+-p structures”, Jpn. J. Appl. Phys. 39, 227, 2000. (SCI)

  55. J.F. Chen, N.C. Chen, P.Y. Wang, J.S. Wang, and C.M. Weng, “Capacitance dispersion in n-LT-i-p GaAs strcutures with the low-temperature layers grown at different temperature”, Jpn. J. Appl. Phys. 38, L1425, 1999. (SCI)

  56. J.F. Chen, P.Y. Wang, C.Y. Tsai, J.S. Wang and N.C. Chen, “Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum well”, Appl. Phys. Lett., 75, 2461, 1999. (SCI)

  57. P.Y. Wang, J.F. Chen, J.S. Wang, N.C. Chen and Y.S. Chen, “Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well”, J. Appl. Phys. 85, 2985, 1999. (SCI)

  58. J.F. Chen, P.Y. Wang, N.C. Chen, ”Effects of high-resitivity, low-temperature layer in transient capacitance measurements of GaAs n-i-p structures”, Jpn. J. Appl. Phys. 37, L1238, 1998. (SCI)

  59. N.C. Chen, P.Y. Wang and J.F. Chen, “Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature”, Appl. Phys. Lett. 72, 1081, 1998. (SCI)

  60. N.C. Chen, P.Y. Wang and J.F. Chen, "Role of 0.66eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs", J. Appl. Phys. 83, 1403, 1998. (SCI)

  61. J.F. Chen, N.C. Chen, P.Y. Wang and M.H. Tsai, "Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures", J. Appl. Phys. 81,1255,1997. (SCI)

  62. J.F. Chen, N.C. Chen, and H.S. Liu, "Deep levels in SnTe-doped GaSb grown on GaAs by molecular beam epitaxy", Jpn. J. Appl Phys. 35, L813, 1996. (SCI)

  63. J.F. Chen, N.C. Chen, and H.S. Liu, "Deep levels, electrical and optical characteristics in SnTe-doped GaSb Schottky diodes", J. Electron. Materials, 25, 1790, 1996. (SCI)

  64. J.F. Chen, N.C. Chen, and H.S. Liu, "Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopy", Appl. Phys. Lett. 69, 1891, 1996. (SCI)

  65. J.F. Chen, N.C. Chen, W.Y. Huang, W.I. Lee and M.S. Feng, "Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method", Jpn. J. Appl. Phys. 35, L810, 1996. (SCI)

  66. J.F. Chen, N.C. Chen, S.Y. Chiu, P.Y. Wang, W.I. Lee and A. Chin, " Temperature- dependent transport properties of n+ GaAs/low-temperature GaAs/n+ GaAs structures grown by molecular bem epitaxy", J. Appl. Phys. 79, 8488, 1996. (SCI)

 

(B)研討會論文

  1. L. H. Zeng, Z. W. Wang, Y. K. Yang, N. C. Chen, “磷化鋁鎵銦發光二極體之熱流特性研究”, PB-81, 2009 Annual Meeting of the Physical Society of Republic of China, National Changhua University of Education, 19~21, January, 2009

  2. H. T. Lin, C. Y. Tseng, G. W. Wang, N. C. Chen, “氮化鋁鎵/氮化鎵高電子遷移率電晶體之蕭基接面漏電流研究”, PB-76, 2009 Annual Meeting of the Physical Society of Republic of China, National Changhua University of Education, 19~21, January, 2009

  3. Chien-Yuan Tseng, Hsin-Tung Lin and N.C. Chen, “Effect of surface treatment on sheet carrier density of AlGaN/GaN HEMT structure”, 143, The 4th Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan, 21-24th, May, 2008.

  4. T.W. Wang, W.C. Lien, M.C. Wu and N.C. Chen, “Violet light-emitting diodes grown on crack-free AlGaN templates”, 147, The 4th Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan, 21-24th, May, 2008.

  5. W.C. Lien, Y.S. Wang, C. Shen, Y.C. Chen and N.C. Chen, “Investigation of GaN grown on boron-implanted Silicon (111) substrates”, 113, The 4th Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan, 21-24th, May, 2008

  6. Y.N. Wang, Y.S. Wang, W.C. Lien, Y.C. Chen and N.C. Chen, “Damage of light-emitting diodes induced by high reverse-bias stress”, 106, The 4th Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan, 21-24th, May, 2008

  7. 陳怡君, 王宥楠, 陳乃權, ”強大逆偏壓下漏電流對氮化銦鎵發光二極體的影響”, AP109, Optics and Photonics Taiwan 2007, 中興大學, Nov.30-Dec.1, 2007

  8. C.Y. Tseng, W.C. Lien, Y.N. Wang, and N.C. Chen, “Electrical Characterization of AlN/Si(111) Interface”, WP_029, The 7th Pacific Rim Conference on Lasers and Electro-Optics, CLEO, COEX, Seoul, Korea, August 26-31, 2007

  9. Y.N. Wang, C.Y. Tseng, Y.C. Chen, and N.C. Chen, “Influence of Strong Reverse-bias on the Leakage Behavior of Light-emitting Diodes”, WP_028, The 7th Pacific Rim Conference on Lasers and Electro-Optics, CLEO, COEX, Seoul, Korea, August 26-31, 2007.

  10. Y.K. Yang, W.C. Lien, Y.C. Huang, and N.C. Chen, “Junction Temperature Measurement of Light-emitting Diodes by Voltage-temperature Relation Method”, WP_027, The 7th Pacific Rim Conference on Lasers and Electro-Optics, CLEO, COEX, Seoul, Korea, August 26-31, 2007.

  11. N.C. Chen, W.C. Lien, T.W. Wang, M.C. Wu, “Nitride light-emitting diodes grown on Si (111) using a TiN template, 第二十四屆光譜與表面科學研討會, July12~July14, 2006.

  12. S.C. Chen, C.P. Huang, S.K. Lin, K.T. Wu, P.H. Chang, N.C. Chen, C.A. Chang, H.C. Peng, C. F. Shih, K.S. Liu, H.S. Wang, P.T. Yang, C.T. Liang, Y.H. Chang and Y.F. Chen, ”Transport measurements on MOVPE-grown InN and InGaN films”, PD-16, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005.

  13. 劉承翰, 唐慈淯, 張慶安, 陳乃權, 張本秀, 施權峰, ”在矽基板上成長氮化物發光元件之光性、電性和結構分析, PD-22, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005.

  14. M.H. Chiang, P.H. Chang, X.C. Chiu, N.C. Chen, C.F. Shih, Y.H. Wu, and W.C. Lien, ”High frequency used devices based on GaN MIS Structures”, PD-03, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005.

  15. S.S. Liu , N.C. Chen, and P. H.Chang, ”LED發光壽命量測系統”, PE-44, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005.

  16. M.Y. Keh, N.C. Chen, and P.H. Chang, ”Investigation of the AlxGa1-xN (x~0.2) films grown on (0001) sapphire by two-step method”, PD-13, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  17. Y. K. Yang, N. C. Chen, and P. H. Chang, ”High power GaN Light-Emitting Diode”, PI-34, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005.

  18. C.J. Cheng, N.C. Chen, and P. H. Chang, ”GaN/Si Tandem Solar Cell”, PE-85, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  19. F.Q. Lin, N.C. Chen, and P.H. Chang, ”AlGaN/GAN High Electron Mobility Transistor(HEMT) Simulation”, PD-11, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005.

  20. A.P. Chiu, N.C. Chen, P.H. Chang, and C.F. Shih, ”Blue and green light-emitting diodes (LED) grown on Si(111) substrates by metal-organic vapor phase epitaxy”, PE-37, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005.

  21. Y.H. Wu, N.C. Chen, and P.H. Chang, ”Investigation of Improving Luminescence Efficiency LED on Silicon by Using Vertical Feedthrough”, PE-36, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  22. Y.S. Wang, N.C. Chen, and P.H. Chang, ”Multipurpose-Mask for LED Device Analysis”, PE-35, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  23. 彭賢渠, 張慶安, 陳乃權, 張本秀, 唐慈淯, 施權峰,”氮化銦鎵的材料特性, PD-19, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  24. H.C. Peng, C.A. Chang, N.C. Chen, P.H. Chang, and C.F. Shih, ”Epitaxial growth of InN films on sapphire by metalorganic chemical vapor deposition”, PD-18, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  25. S.T. Lien, C.A. Chang, N.C. Chen, P.H. Chang, and C.F. Shih, “Two-dimensional electron gas transport properties in AlGaN/GaN heterostructures grown on sapphire and silicon substrates”, PD-14, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  26. W.C. Lien, N.C. Chen, C.A. Chang, P.H. Chang, and C.F. Shih “Using TiN as Buffer Layer and Reflective Mirror of LEDs on Silicon Substrate”, PE-40, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  27. F.C. Zhuang , N.C. Chen, and P.H. Chang, “The Optimization of Luminous Efficiency for LED”, PE-39, 2005 Annual Meeting of ROC Physical Society, Sun-Yet-Shan University, 1~3, February, 2005

  28. S.K. Lin, K.T. Wu, S.C. Chen, C.P. Huang, P.H. Chang, N.C. Chen, C.A. Chang, H.C. Peng, C.F. Shih, K.S. Liu, H.S. Wang, P.T. Yang, C.T. Liang, Y.H. Chang and Y.F. Chen, “Transport measurements on MOVPE-grown InN films”, The 5th International Conference on Low Dimensional Structures and Devices, 2004.12.12.~2004.12.17. in Cancun-Mayan Rivera

  29. P.H. Chang, N.C. Chen, C.A. Chang, H.C. Peng, C.F. Shih, K.S. Liu, S.K. Lin, K.T. Wu, S.C. Chen, C.P. Huang, H.S. Wang, P.T. Yang, C.T. Liang, Y.H. Chang and Y.F. Chen, “Transport measurements on MOVPE-grown InN films”, The 9th Asia Pacific Physics Conference, 2004.10.25.~2004.10.31. in Vietnam.

  30. N.C. Chen, C.F. Shih, C.A. Chang, and K.S. Liu, “High quality GaN films grown on Si (111) by reversed Stranski-Krastanov growth mode”, The 5th international Symposium on Blue Laser and Light Emitting Diodes, p.285, 2004

  31. C.A. Chang, C.F. Shih, N.C. Chen, and K.S. Liu, “High mobility InN Films Grown by MOVPE”, The 5th international Symposium on Blue Laser and Light Emitting Diodes, p.56, 2004.

  32. 呂育桓、詹志偉、林奐衡、張本秀、陳乃權,高溫超導微波元件濾波器之設計與製作 第三屆台塑關係企業應用技術研討會, p. D-14, 2003

  33. 邱安平、張本秀、陳乃權、施權峰,”InGaN/GaN MQW紫光發光二極體 第三屆台塑關係企業應用技術研討會, p. C-12, 2003

  34. 劉學興、張宮華、陳乃權、張本秀,”LED穩定度量測系統設計 第三屆台塑關係企業應用技術研討會, p. C-11, 2003

  35. 楊延鍇、陳乃權、張本秀,高功率大面積發光二極體LED設計 第三屆台塑關係企業應用技術研討會, p. C-10, 2003

  36. 莊富存、黃恆毅、巫佑光、陳彰和、施權峰、王宥楠、張本秀、陳乃權,”LED發光效率的最佳化 第三屆台塑關係企業應用技術研討會, p. C-09, 2003

  37. 王俞授、王宥楠、施權峰、張本秀、陳乃權,多功能MASKLED物性量測分析 第三屆台塑關係企業應用技術研討會, p. C-08, 2003

  38. 王宥楠、陳乃權、施權峰、邱安平、曾建元、張本秀、王明程、吳國梅、馮武雄、劉國雄,”(New Transmission Line modeling) NTLM理論對氮化鎵歐姆接觸特性之量測分析 第三屆台塑關係企業應用技術研討會, p. C-07, 2003.

  39. 曾建元、陳乃權、張本秀、施權峰、邱安平、新型MIS(Metal/AlN/Si) 電容元件製作及特性分析 第三屆台塑關係企業應用技術研討會, p. C-06, 2003.

  40. Y.L. Kao, C.C. Kuo, C.F. Shih, N.C. Chen, R.D. Chang, and G.M. Wu, “Evaluation of Etch pit density on p-type GaN cap of InGaN/GaN MQE”, 第三屆台塑關係企業應用技術研討會, p. C-04, 2003.

  41. 陳乃權、施權峰、邱安平、王宥楠、曾建元、張本秀、王明程、吳國梅、馮武雄、劉國雄,氮化合物發光二極體工作電壓簡易分析法 Electron Devices and Materials Symposium, p.924, 2003

  42. 施權峰、陳乃權、邱安平、王宥楠、鄧順達、王明程、馮武雄、劉國雄,”Effect of surface work function of p-type GaN on the electrical properties of blue LED” Electron Devices and Materials Symposium, p.862, 2003.

  43. 陳乃權、施權峰、邱安平、王宥楠、曾建元、張本秀、王明程、吳國梅、馮武雄、劉國雄,新式TLM模型及其在氮化鎵歐姆接觸特性量測之應用Electron Devices and Materials Symposium, p.380, 2003.

  44. 周以倫、周李昌、陳乃權、吳宗豐、倪澤恩、林瑞明,提高磷化鋁鎵銦發光二極體亮度之研究Optics and Photonics Taiwan 2001 Proceeding , p.967

  45. S.C. Chang, Y.H. Tzou, K.M. Uang, S.R. Wang, S.J. Wang, N.C. Chen, and B.J. Wu, “Investigation of Electroplating Nickel Substrate for AlGaInP Light-Emitting Diodes”, Optics and Photonics Taiwan 2001 Proceeding, p.120

  46. N.C. Chen, P.Y. Wang, and J.F. Chen, “分子束低溫磊晶成長砷化鎵0.66eV電子缺陷的特性分析,第一屆台灣半導體科技研討會, 1997

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