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長庚大學 光電工程研究所
張連璧 教授
現職 :
     現任長庚大學光電工程研究所所長
Liann-Be Chang
He received the B.S. degree from the National Chiao Tung University, Hsinchu, Taiwan, in 1980 and the Ph.D. degree from the National Defense University, Taoyuan, Taiwan, in 1987. From 1987 to 1988, he was a Visiting Scholar with the Department of electrical and Computer Engineering, University of Illinois, at Urbana-Champaign, Illinois, USA.
From 1982 to 1984, he was a Chief Instrument Engineer with the Taiwan Power Company, Taiwan’s third nuclear power plant. From 1998 to 2004, he was an Associate Professor, a Professor and then the Chair of Electronics Engineering Department, National Defense Univ2007, he was the Chair of the Electronics Engineering Department, Chang Gung University, Taoyuan, where he is currently
a Coordinator of the Green Technology Research Center and the Associate Dean of the Engineering College.
His research interest is focused on the design and fabrication of optoelectronic and microwave devices such Solar Cells, power LEDs and power HEMTs.
1.          Journal of the Electrochemical Society 157 (2) H160-H164 (2010), Hsien-Chin Chiu, Chao-Wei Lin, Chao-Hung Chen, Chin-Wei Yang, Che-Kai Lin, Jeffrey S. Fu, Liann-Be Chang, Ray-Ming Lin and Kuang-Po Hsueh, “Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs”
2.          IEEE Transactions on Electron Devices 57 (1) (2010) 119-124, Liann-Be Chang, Kuo-Ling Chiang, Hsin-Yi Chang, Ming-Jer Jeng, Chia-Yi Yen, Cheng-Chen Lin, Yuan-Hsiao Chang, Mu-Jen Lai, Yu-Lin Lee and Tai-Wei Soong, “Electrostatic reliability characteristics of GaN Flip-Chip power light emitting diodes with metal Oxide silicon submount”
3.          Japanese Journal of Applied Physics 48 05DF02 (2009), Atanu Das, Siddheswar Maikap, Wei-Chih Li, Liann-Be Chang, and Jer-Ren Yang, “Physical and Memory Characteristics of Atomic-Layer-Deposited High-k Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-OxideMetalGate”
4.          Microelectronic Engineering (2009), Atanu Das, S. Maikap, C.-H. Lin, P.-J. Tzeng, T.-C. Tien, T.-Y. Wang, L.-B. Chang, J.-R. Yang, M.-J. Tsai, “Ruthenium Oxide Metal Nanocrystal Capacitors with High-k Dielectric Tunneling Barriers for Nanoscale Nonvolatile Memory Device Applications”In Press.
5.          Microwave and Optical Technology Letters Vol.51,No 12 (2009),Ji-Chyun Liu, Jhih-Wei Wang, Atanu Das and Liann-Be Chang, “Wide-Band Double-Ring Resonator with Transmission Zeros and Resonances Using High Permittivity Aluminum Nitride Substrate”
6.          Journal of Physics D: Applied Physics 42 (10), art. no.105101 (6pp), 2009.4.24, Ming-Jer Jeng, Yu-Lin Lee and Liann-Be Chang, “Temperature dependence of InxGa1-xN multiple quantum well solar cells”
7.          Applied Surface Science, Volume 225 Pages 6155-6158, 2009.3.1, Liann-Be Chang,Ching-Chuan Shiue,Ming-Jer Jeng,”High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contancts for flip-chip Light-emitting diode(FCLED) application”【SCI/EI】
8.          Journal of the Electrochemical Society, 156 (3), pp. K28-K32, 2009. S. Maikap, Atanu Das, T. Y. Wang, T. C. Tien, and L. B. Chang, “High-k HfO2 nanocrystal memory capacitors prepared by phase separation of atomic-layer-deposited HfO2/Al2O3 nano-mixtures” 【SCI】
9.          IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 11,2008, Hsien-Chin Chiu, Chih-Wei Yang, Yung-Hsiang Lin, Ray-Ming Lin, Liann-Be Chang, “Device Characteristics of AlGaN/GaN MOS-HEMTs Using High-kPraseodymium OxideLayer“【SCI/EI】
10.      Semiconductor Science and Technology, Volume 23, Issue 3(2008), Chiu, H.-C., Huang, Y.-C., Chang, L.-B., Chien, F.-T, “GaAs pseudomorphic HEMT with insulating gate films formed by P 2S5/(NH4)2SX sulfurization of recessed GaAs surface“【SCI/EI】
11.      SPIE the international and society for optical engineering, Volume 6894, 2008, P.P 689412 (2008), Chang, L.-B., Chang, Y.-H., Chang, Y.-S., Jeng, M.-J, “On chip surge protection for GaN-power LEDs by ZnO thin film varistor“【SCI/EI】
12.      Applied Surface Science, Volume 254, Issue 15, Pages 4479-4482 (2008), Jeng, Ming Jer, Shiue, Ching Chuan, Chang, Liann Be, “The reflectivity of Mo/Ag/Au ohmic contacts on p-type GaN for flip-chip light-emitting diode (FCLED) applications”【SCI/EI】
13.      Journal of the Electrochemical Society 155 (12), pp. H955-H958(2008), Chiu, Hsien Chin, Lin, Chao W, Lin, Che K, Chang Liann Be,“Comprehensive study of GaAs MOSFETs using gadolinium oxide and praseodymium oxide layers“【SCI/EI】
14.      IEEE Trans. Electron Device, vol.55, pp. 721-726 (2008), Hsien-Chin Chiu, Yuan-Chang Huang, Chung-Wen Chen and Liann-Be Chang, “Electrical Characteristics of Passivated Pseudomorphic HEMTs with P2S5/(NH4)2SX Pretreatment” 
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