教授

 

03-2118800分機5791

neete@mail.cgu.edu.tw

長庚大學光電工程研究所

量子光電科學與技術實驗室(工學院9樓E0919)

 

 

氮化鎵LED與砷化鎵量子點相關材料之結構及光電特性量測分析

氮化鎵與砷化鎵相關材料之元件製程

奈米結構材料之材料特性模擬分析(Si,GaN,GaAs,ZnO,CNT..etc)

太陽能電池之材料特性模擬分析

生醫光學之光學特性分析

Labview儀器控制與量測儀器系統

 

 

中央大學電子工程 博士 ( 1999/8 )

中央大學電子工程 碩士 ( 1991/8 )

中央大學電機工程 學士 ( 1988/8 )

長庚大學 教授 ( 2009 - )

長庚大學 副教授  ( 2004 ~ 2009 )

長庚大學 助理教授  ( 2000 ~ 2004 )

 

 

 基礎群論

Tzer-En Nee was born in Taiwan, Republic of China, on March 4, 1965. He received the B.S., M.S., and Ph.D. degrees from National Central University, Taiwan, in 1988, 1991, 1999, respectively. From 1999 to 2000 he was a post doctor at Department of Electrical Engineering, National Central University. His research was related to grow compound semiconductor heterostructure devices employing Molecular Beam Epitaxy (MBE) and Metal-Organic Vapor Phase Epitaxy (MOVPE). In 2000, he joined the staff of the Department of Electronic Engineering, Chang Gung University, Taiwan, where he is an Associate Professor of the Department of Electronic Engineering now.

1.    H.-S. Fung, T.-E. Nee, P.-J. Tsai, W.-T. Cheng, H.-H. Wu, and T.-S. Yih, "Observation of Nonlinear Optical Process Generated Infrared Emission in Sodium Vapor", Chinese J. of Physics 31, 265-275 (1993).

2.    J-I Chyi, J-L Shieh, R-M Lin, T-E Nee, and J-W Pan, "Molecular-beam epitaxial growth of In_xAl_1–xAs on GaAs", Appl. Phys. Lett., 67, 2046-2048, (1995).

3.    C.-T Lee, C.-D. Tsai, C.-Y. Wang, H.-P. Shiao, and T.-E. Nee, "Sidegating Effect Improvement of GaAs Metal-Semiconductor Field Effect Transistor by Multiquantum Barrier Structure", Appl. Phys. Lett. 67, 2046-2048, (1995).

4.    C-T. Lee, T.-E. Nee, "Electroabsorption of Unstrained InGaAs/InAlGaAs Multiple Quantum Well Structure Grown on GaAs Substrates", Int. J. of High Speed Electronic and Systems 8, 587-598 (1997).

5.    J.-I. Chyi, T.-E. Nee, C.-T. Lee, J.-L. Shieh, and J.-W. Pan, "Formation of Self-Organized Quantum Dots on GaAs by Molecular Beam Epitaxy", J. Cryst.l Growth 175/176, 777-781 (1997).

6.    T.-E. Nee, N.-T. Yeh, J.-I. Chyi, and C.-T. Lee, "Matrix-Dependent Structural and Photoluminescence Properties of In_0.5Ga_0.5As Quantum Dots Grown by Molecular Beam Epitaxy", Solid-State Electronics 42, 1131 (1998).

7.    M.-N. Chang, J.-W. Pan, J.-I. Chyi, K. C. Hsieh, and T.-E. Nee, "Effect of Column III Vacancy on Arsenic Precipitation in Low-Temperature Grown III-V Arsenides", Appl. Phys. Lett. 72, 587-589 (1998).

8.    N.-T. Yeh, T.-E. Nee, P.-W. Shiao, M.-N. Chang, J.-I. Chyi, and C. T. Lee, "Photoluminescence Characteristics of Self-Assembled In_0.5Ga_0.5As Quantum Dots on Vicinal GaAs Substrates", Jpn. J. Appl. Phys. 38, 550-553 (1999).

9.    T.-E. Nee, N.-T. Yeh, P.-W. Shiao, J.-I. Chyi, and C. T. Lee, "Room-Temperature Operation of In_0.5Ga_0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy", Jpn. J. Appl. Phys. 38, 605-607 (1999).

10. W. H. Chang, T. M. Hsu, K. F. Tsai, T.-E. Nee, J.-I. Chyi, and N.-T. Yeh, "Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Organized Quantum Dots", Jpn. J. Appl. Phys. 38, 554-557 (1999).

11. T.-E. Nee, N.-T. Yeh, J.-M. Lee, J.-I. Chyi, and C. T. Lee, "High Characteristic Temperature Be-doped In_0.5Ga_0.5As Quantum Dot Lasers Grown on GaAs Substrates by Molecular Beam Epitaxy", J. Cryst. Growth 201/202, 905-908 (1999).

12. N.-T. Yeh, T.-E. Nee, and J.-I. Chyi, "Characterization of In_0.5Ga_0.5As Quantum Dot p-i-n Structures with Different Matrices", J. Cryst. Growth 201/202, 1168-1171 (1999).

13. M. N. Chang, K. C. Hsieh, T.-E. Nee, C. C. Chuo, and J.-I. Chyi, "Behavior of Arsenic Precipitation in Low-Temperature Grown III-V Arsenides", J. Cryst. Growth 201/202, 212-216 (1999).

14. M. N. Chang, K. C. Hsieh, J.-I. Chyi, and T.-E. Nee, "Effects of Point Defect Distribution on Arsenic Precipitation in Low-Temperature Grown III-V Arsenides", J. Appl. Phys. 86, 2442-2447 (1999).

15. T. M. Hsu, W.-H. Chang, K. F. Tsai, J.-I. Chyi, N.-T. Yeh, and T.-E. Nee, "Electron-Filling Modulation Reflectance in Charged Self-Assembled InGaAs Quantum Dots", Phys. Rev. B 60, R2189-2192 (1999).

16. N. -T. Yeh, T. -E. Nee, J.-I. Chyi, T. M. Hsu, and C. C. Huang, "Matrix Dependence of Strain-Induced Wavelength Shift in Self-Assembled InAs Quantum-Dot Heterostructures", Appl. Phys. Lett. 76, 1567 (2000).

17. C.-C. Chuo, C.-M. Lee, T.-E. Nee, and J.-I. Chyi, "Effects of Thermal Annealing on the Luminescence and Structural Properties of High Indium Content InGaN/GaN Quantum Wells", Appl. Phys. Lett. 76, 3902 (2000).

18. J. W. Johnson, B. Luo, F. Ren, G. B. Gila, W. Krishnamoorthy, C. R. Abernathy, S. J. Pearton, J. I. Chyi, T.-E. Nee, C. M. Lee, and C. C. Chuo, "Gd₂O₃/GaN Metal-Oxide-Semiconductor Field-Effect-Transistors", Appl. Phys. Lett. 77, 3230 (2000).

19. A. P. Zhang, G. Dang, F. Ren, J. Han, H. Cho, S. J. Pearton, J.-I. Chyi, T.-E. Nee, C.-M. Lee, C.-C. Chuo, S.N.G. Chu, "Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers", Solid-State Electron. 44, 1157 (2000).

20. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J.-I. Chyi, T.-E. Nee, C.-C. Chuo, and C.-M. Lee, "Unusual Behavior of the Electrical Properties of GaN p-i-n Rectifiers Caused by the Presence of Deep Centers and by Migration of Shallow Donors", Solid-State Electron. 44, 1549 (2000).

21. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J.-I. Chyi, T.-E. Nee, C.-M. Lee, and C.-C. Chuo, "Spatial Distribution of Electrical Properties in GaN p-i-n Rectifiers", Solid-State Electron. 44, 1591 (2000).

22. N.-T. Yeh, J. M. Lee, T.-E. Nee, J.-I. Chyi, "Self-Assembled In_0.5Ga_0.5As Quantum Dot Lasers with Doped Active-Region", IEEE Photonics Technology Lett. 12, 1123 (2000).

23. N.-T. Yeh, T.-E. Nee, J.-I. Chyi, C.-T. Chia, T.-M. Hsu, and C.-C. Huang, "Improved Electroluminescence of InAs Quantum Dots with Strain reducing Layer", J. Cryst. Growth 227/228, 1044-1048 (2001).

24. A. P. Zhang, G. T. Dang, F. Ren, H. Cho, K.-P. Lee, S. J. Pearton, J.-I. Chyi, T.-E. Nee, C.-M. Lee, and C.-C. Chuo, "Comparison of GaN P-I-N and Schottky Rectifier Performance", IEEE Transactions on Electron Devices 48, 407 (2001).

25. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J.-I. Chyi, T.-E. Nee, C.-C. Chou, and C.-M. Lee, "Electrical Properties and Spectra of Deep Centers in GaN p-i-n Rectifier Structures", Journal of Electronic Materials 30, 147 (2001).

26. J. W. Johnson, J. R. LaRoch, F. Ren, B. P. Gila, M. E. Overberg, C. R. Abernathy, J.-I. Chyi, C.-C. Chuo, T.-E. Nee, C.-M. Lee, K. P. Lee, S. S. Park, Y. J. Park, and S. J. Pearton, "Schottky Rectifiers Fabricated on Free-Standing GaN Substrates", Solid-State Electronics 45, 405 (2001).

27. S. J. Pearton, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, K. P.Lee, H. Cho, B. P. Gila, J. W. Johnson, C. Monier, C. R. Abernathy, J. Han, A. G. Baca, J.-I. Chyi, C.-M. Lee, T.-E. Nee, C.-C. Chuo, and S.N.G. Chu, "GaN Electronics for High Power, High Temperature Applications", Materials Science and Engineering B: Solid-State Materials for Advanced Technology 82, 227 (2001).

28. R.-M. Lin, T.-E. Nee, M.-C. Tsai, Y.-H. Chang, P.-L. Fan, and R.-S. Chang, "Thickness Dependent Renormalization of Strain Effects on Self-Organized InAs Quantum Dots Grown on GaAs", J. Vac. Sci. Technol.  20, 1125 (2002).

29. T.-E. Nee, R.-M. Lin, L.-Z. Hsieh, and L.-B. Chang, "Growth and Coalescence Evolution of InAs on GaAs by Molecular Beam Epitaxy", J. Vac. Sci. Technol. A 20, 1128 (2002).

30. T.-E. Nee, K.-T. Chien, Y.-L Chou, L.-C. Chou, C.-H. Lin, R.-M. Lin, B.-R. Fang, and S.-S. Chang, "Effect of Current Spreading on Luminescence Emission in Selectively Oxidized AlGaInP Light-Emitting Diodes", J. Vac. Sci. Technol. B 21, pp. 1157-1160 (2003).

31. T.-E. Nee, C.-C. Cheng, and R.-M. Lin. "Phonon-Assisted Auger Recombination Process in the InGaAs/GaAs Single Quantum Well Lasers", Jpn. J. Appl. Phys. 43, pp. 890-893, (2004).

32. R.-M. Lin, C.-C. Cheng, H.-T. Shen, and T.-E. Nee, "Study of Lateral-Carrier Transport in InAs Quantum-Dot Heterostructures by Optical Spectroscopy", J. Vac. Sci. Technol. A 22, 891 (2004).

33. Shiang Feng Tang, Shih Yen Lin, San Te Yang, Cheng Der Chiang, Ya Tung Cherng, Hui Tang Shen, Tzer-En Nee, R.-M. Lin, and Min Yu Hsu, "Surface Morphology and Photoluminescence of InAs Quantum Dots Grown on -Oriented Streaked Islands Under Ultra-low V/III Ratio", IEEE Trans. on Nanotechnology 3, 275 (2004).

34. Y.-F. Wu, H.-T. Shen, Y.-H. Lin, C.-C. Cheng, R.-M. Lin, T.-E. Nee, and N.-T. Yeh, "Intersublevel Relaxation Dependence of Carrier Hopping in Self-Organized InAs Quantum Dot Heterostructures", Solid State Phenomena 99-100, pp. 41-48 (2004).

35. Ray-Ming Lin, Chung-Han Lin, Jen-Cheng Wang, Tzer-En Nee, Nie-Chuan Chen, Chuan-Feng Shih, Bor-Ren Fang, and Ruey-Yu Wang, "Study of Electroluminescence Quenching in the InGaN/GaN Blue Diode with Multi-Quantum Barrier Structure", J. Cryst. Growth. 278, pp. 421-425 (2005).

36. Tzer-En Nee, Ya-Fen Wu, and Ray-Ming Lin, "Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures", J. Vac. Sci. Technol. B 23, pp. 954-958 (2005).

37. Tzer-En Nee, Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Ching-An Huang, Bor-Ren Fang, and Ruey-Yu Wang, "Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers", J. Vac. Sci. Technol. B 23, pp. 966-969 (2005).

38. Tzer-En Nee, Ya-Fen Wu, Chao-Ching Cheng, and Hui-Tang Shen, "Carrier dynamics study of the temperature- and excitation-dependent photoluminescence of InAs/GaAs quantum dots", J. Appl. Phys. 99, 013506 (2006).

39. Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Chao-Ching Cheng, and Ray-Ming Lin, "Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems", J. Vac. Sci. Technol. B 24, pp. 34-37 (2006).

40. Tzer-En Nee, Hui-Tang Shen, Jen-Cheng Wang, and Ray-Ming Lin, "Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems, J. Cryst. Growth 287, pp. 468-471 (2006).

41. Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Chung-Han Lin, and Ya-Fen Wu, "Observations of the electrical and luminescence anomalies in InGaN/GaN blue light-emitting diodes", J. Vac. Sci. Technol. A 24, pp. 1016-1019 (2006).

42. Tzer-En Nee, Hui-Tang Shen, Jen-Cheng Wang, and Ya-Fen Wu, "Anomalous excitation dependence of electroluminescence in InGaN/GaN light-emitting diodes", J. Appl. Phys. 101, 023703 (2007).

43. Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, and Ya-Fen Wu, "The effect of high temperature on the optical properties of InGaN/GaN blue light-emitting diodes with multiquantum barriers", J. Cryst. Growth 298, pp. 714-718 (2007).

44. Jiunn-Chyi Lee, Yeu-Jent Hu, Ya-Fen Wu, Jia-Hui Fang, Tzer-En Nee, Jen-Cheng Wang, and Hui-Tang Shen, "Thermally-activated effects on photoluminescence line shape of InAs/GaAs quantum dot heterosystems", Eur. Phys. J. Appl. Phys. 38, pp. 21-25 (2007).

45. Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Ya-Fen Wu, , Yu-Tai Shih, and Chien-Lin Lu, "Enhancement of Carrier Confinement in Blue InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Multiquantum Barriers", Jpn. J. Appl. Phys. 46, pp. 2413-2417 (2007).

46. Tzer-En Nee, Chih-Chun Ke, Cheng-Wei Hung, Jen-Cheng Wang, Hui-Tang Shen, Ya-Fen Wu, Chang-Cheng Chuo, and Zheng-Hong Lee, "The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems", Jpn. J. Appl. Phys. 46, pp. 2558-2562 (2007).

47. Tzer-En Nee, Jen-Cheng Wang, Hui-Tang Shen, Ya-Fen Wu, "Effect of multiquantum barriers on performance of InGaN/GaN multiple-quantum-well light-emitting diodes", J. Appl. Phys. 102, 033101 (2007).

48. Gwo-Mei Wu, Ta-Jen Chung, Tzer-En Nee, Da-Chuan Kuo, Wei-Jen Chen, Chih-Chun Ke, Cheng-Wei Hung, Jen-Cheng Wang, and Nie-Chuan Chen, "Improvements of quantum efficiency and thermal stability by using Si delta doping in blue InGaN/GaN multiple quantum well light-emitting diodes", Phys. Stat. Sol. (c) 4, pp. 2797-2801 (2007).

49. Tzer-En Nee, Ya-Fen Wu, Jiunn-Chyi Lee, and Jen-Cheng Wang, "Temperature and Excitation Dependence of Photoluminescence Spectra of InAs/GaAs Quantum Dot Heterostructures, IEEE Trans. Nanotechnol. 6, pp. 492-496 (2007).

50. Jiunn-Chyi Lee, Ya-Fen Wu, Chia-Hui Fang, Jen-Cheng Wang, and Tzer-En Nee, "Characterization of interface fluctuations and emission mechanisms in InGaN/AlGaN multiple quantum wells", Physica B 401-402, pp. 568-571 (2007).

51. Gwo-Mei Wu, Kung-Yu Cheng, Chia-Hui Fang, Tzer-En Nee, Jen-Cheng Wang, Nie-Chuan Chen, Yeu-Jent Hu, Jiunn-Chyi Lee, and Ya-Fen Wu, "Effect of Excitonic Interactions on Abnormal Luminescence Behaviour of InGaN/GaN Light-Emitting Diodes with Electron Tunneling Layer", Jpn. J. Appl. Phys. 47, pp. 679-681 (2008).

52. W. C. Yang, C. W. Wang, Jen-Cheng Wang, Y. C. Chang, H. C. Hsu, Tzer-En Nee, L. J. Chen, and J. H. He, "Aligned Er-doped ZnO Nanorod Arrays with Enhanced 1.54 μm Infrared Emission", J. Nanosci. Nanotechnol. 8, pp. 3363–3368 (2008).

53. Tzer-En Nee, Jen-Cheng Wang, Hui-Yui Chen, Wan-Yi Chen, Kung-Yu Cheng, Hui-Tang Shen, Ya-Fen Wu, Joe-Air Jiang, and Ping-Lin Fan, "Anomalous Electroluminescence Phenomena in InGaN/GaN Multiple Quantum Well Light-emitting Diodes with Electron Tunneling Layer", Jpn. J. Appl. Phys. 47, pp. 7148-7151 (2008).

54. Jiunn-Chyi Lee, Ya-Fen Wu, Yi-Ping Wang, and Tzer-En Nee, "Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wells", J. Cryst. Growth 310, pp. 5143-5146 (2008).

55. Gwo-Mei Wu, Zong-Jhih Cai, Jen-Cheng Wang, and Tzer-En Nee, "Design and simulation in GaN based light emitting diodes using focused ion beam generated photonic crystals", Surf. Coat. Technol. 203, pp. 2674-2678 (2009).

56. Tzer-En Nee*, Jen-Cheng Wang, Cheng-Wei Hung, Chih-Chun Ke, Hui-Tang Shen, Ya-Fen Wu, Chang-Cheng Chuo, Zheng-Hong Lee, Ping-Lin Fan, and Joe-Air Jiang, "Optical investigations of Berthelot-type properties in quaternary AlInGaN multiple quantum well heterosystems", J. Cryst. Growth 311, pp. 3544-3548 (2009).

57. Gwo-Mei Wu, Yen-Hsun Lu, Jen-Wei Teng, Jen-Cheng Wang, and Tzer-En Nee, "Preparation and characterization of pentacene-based organic thin-film transistors with PVA passivation layers", Thin Solid Films 517, pp. 5318-5321 (2009).

58. Tzer-En Nee*, Chia-Hui Fang, Yan-Ru Chen, Jen-Cheng Wang, Ping-Lin Fan, and Joe-Air Jiang, "Characterization of the anomalous luminescence properties from self-ordered porous anodic alumina with oxalic acid electrolytes," Thin Solid Films 518, pp. 1439-1442 (2009).